Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients

Pierre Muret (1) , Julien Pernot (1) , Tokuyuki Teraji (2) , Toshimichi Ito (3)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite
2 NIMS - National Institute for Materials Science
3 Graduate School of Engineering

Transient capacitance spectroscopy of deep energy levels (DLTS) in the band gap of boron-doped homoepitaxial diamond displays two types of defect when temperature is raised from 250 to 650 K. The first trap is a strongly attractive center for holes while the second one is repulsive, with respective activation energies of 1.57 and 1.15 eV. Concentration profile is non-monotonic for the first trap and changes when the diode undergoes repetitive temperature cycles. Analysis of all the data shows that the deep centers found in this study come fromstructural defects, eventually associated with a charged impurity. © 2008 The Japan Society of Applied Physics

Mots clés: diamond; deep defects; DLTS; Schottky diode; boron doping

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Electronique

Pierre Muret, Julien Pernot, Tokuyuki Teraji, Toshimichi Ito. Near-Surface Defects in Boron-Doped Diamond Schottky Diodes Studied From Capacitance Transients. Japanese Journal of Applied Physics, part 2 : Letters, 2008, 1, pp.035003. ⟨10.1143/APEX.1.035003⟩. ⟨hal-00853380⟩