Growth of Vertical GaAs Nanowires on an Amorphous Substrate via a Fiber-Textured Si Platform
Résumé
We demonstrate the vertical self-catalyzed MBE growth of GaAs nanowires on an amorphous SiO2 substrate by using a smooth [111] fiber-textured silicon thin film with very large grains, fabricated by aluminium-induced crystallization. This generic platform paves the way to the use of inexpensive substrates for the fabrication of dense ensembles of vertically standing NWs with promising perspectives for the integration of NWs in devices.