Production of polycristalline silicon by natural sintering for photovoltaic applications

J.M. Lebrun (1) , J.M. Missiaen (1) , C. Pascal (1) , J.P. Garandet (2) , F. Servant (3)

1 SIMaP - Science et Ingénierie des Matériaux et Procédés
2 CEA - Commissariat à l'énergie atomique et aux énergies alternatives
3 CEA - CEA - Commissariat à l'Energie Atomique

The invention relates to a silicon sintering process, with no external force added, which comprises positioning a silicon sample in a furnace and then heat-treating this sample at least at a certain temperature and with at least a partial pressure of oxidizing species in order to control the thickness of a silicon oxide layer on the surface thereof.

Domaines: Matériaux

J.M. Lebrun, J.M. Missiaen, C. Pascal, J.P. Garandet, F. Servant. Production of polycristalline silicon by natural sintering for photovoltaic applications. France, Patent n° : FR2966287 (A1). GPM2. 2012. ⟨hal-00824487⟩