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UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

Abstract : Experimental work on laser induced ablation of thin Al2O3(20 nm)/SiN:H (70 nm) and a-Si:H (20 nm)/SiN:H (70 nm) stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration) but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration), however a-Si:H flakes and Al2O3 lace remain after ablation process.
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https://hal.archives-ouvertes.fr/hal-00811798
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Submitted on : Thursday, April 11, 2013 - 10:37:42 AM
Last modification on : Tuesday, November 30, 2021 - 9:02:04 AM

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T. Schutz-Kuchly, A. Slaoui, J. Zelgowski, A. Bahouka, M. Pawlik, et al.. UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H. 4th Photovoltaic Technical Conference, PVTC 2013, ''Thin Film and Advanced Silicon Solutions 2013'', 2013, Aix-en-Provence, France. 55201, 5 p., ⟨10.1051/epjpv/2013027⟩. ⟨hal-00811798⟩

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