UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

T. Schutz-Kuchly (1) , A. Slaoui (1) , J. Zelgowski (2) , A. Bahouka (2) , M. Pawlik (3) , Jean-Pierre Vilcot (3) , E. Delbos (4) , M. Bouttemy (5) , R. Cabal (6)

1 ICube - Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie
2 IREPA-Laser
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 KMG Group
5 ILV - Institut Lavoisier de Versailles
6 DTS - Département des Technologies Solaires

Experimental work on laser induced ablation of thin Al2O3(20 nm)/SiN:H (70 nm) and a-Si:H (20 nm)/SiN:H (70 nm) stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration) but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration), however a-Si:H flakes and Al2O3 lace remain after ablation process.

Domaines: Sciences de l'ingénieur [physics]

T. Schutz-Kuchly, A. Slaoui, J. Zelgowski, A. Bahouka, M. Pawlik, et al.. UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H. 4th Photovoltaic Technical Conference, PVTC 2013, ''Thin Film and Advanced Silicon Solutions 2013'', 2013, Aix-en-Provence, France. 55201, 5 p., ⟨10.1051/epjpv/2013027⟩. ⟨hal-00811798⟩