Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing

Manuel Lopez-Ponce (1) , A. Hierro (1) , J.-M. Ulloa (1) , Pierre Lefebvre (1, 2) , E. Munoz (3) , S. Agouram (4) , V. Muñoz-Sanjosé (5) , K. Yamamoto (6) , A. Nakamura (7) , J. Temmyo (7)

1 ETSI Telecomunicacion - Departamento de Ingeniería Electrónica and ISOM
2 L2C - Laboratoire Charles Coulomb
3 ISOM-Univ. Politécnica de Madrid ( UPM ). ETSIT
4 Departamento de Fisica Aplicada y Electromagnetismo
5 ICMUV - Institut Universitari de Ciencia dels Materials
6 Research Institute of Electronics
7 Research Institute for Electronics

ZnCdO nanowires with up to 45% Cd are demonstrated showing room temperature photoluminescence (PL) down to 2.02 eV and a radiative efficiency similar to that of ZnO nanowires. Analysis of the microstructure in individual nanowires confirms the presence of a single wurtzite phase even at the highest Cd contents, with a homogeneous distribution of Cd both in the longitudinal and transverse directions. Thermal annealing at 550 C yields an overall improvement of the PL, which is blue-shifted as a result of the homogeneous decrease of Cd throughout the nanowire, but the single wurtzite structure is fully maintained.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Manuel Lopez-Ponce, A. Hierro, J.-M. Ulloa, Pierre Lefebvre, E. Munoz, et al.. Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing. Applied Physics Letters, 2013, 102, pp.143103. ⟨10.1063/1.4799491⟩. ⟨hal-00809307⟩