Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

K. Pantzas (1) , Y. El Gmili (1) , J. Dickerson , S. Gautier (2) , L. Largeau , O. Mauguin , G. Patriarche , S. Suresh (1) , T. Moudakir (1) , C. Bishop , A. Ahaitouf (1) , T. Rivera , C. Tanguy , P.L. Voss (1) , A. Ougazzaden (1)

1 UMI GT CNRS
2 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes

K. Pantzas, Y. El Gmili, J. Dickerson, S. Gautier, L. Largeau, et al.. Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE. Journal of Crystal Growth, 2012, 370, pp.57-62. ⟨10.1016/j.jcrysgro.2012.08.041⟩. ⟨hal-00806864⟩