OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients
Résumé
Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with a very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact ionization coefficients for 4H-SiC have been extracted in the electric field range from 3 to 4.8 MV/cm. In combination with ionization coefficients in our previous paper extracted from diodes with a low-doped avalanche region, we propose a set of parameters of impact ionization coefficients for 4H-SiC, applicable to a wide electric field range.