160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management

Stéphane Piotrowicz (1) , Olivier Jardel (1) , Jean-Claude Jacquet (1) , D. Lancereau (1) , Raphaël Aubry (1) , Erwan Morvan (1) , Nicolas Sarazin (1) , Jérémy Dufraisse (1) , Charu Dua (1) , Mourad Oualli (1) , Eric Chartier (1) , Marie-Antoinette Di Forte-Poisson (1) , Christophe Gaquière (2) , Sylvain Laurent Delage (1)

1 Thales Research and Technology [Palaiseau]
2 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power die. Thanks to an optimized thermal management, the amplifier allows us to reach an output power of 160W in pulse mode and 105W in CW. To our knowledge, these results represent the highest output powers ever reported for InAlN/GaN HEMT technology.

Mots clés: Gallium nitride; Power amplifiers; HEMTs; MODFETs; Power generation; Thermal resistance; Current measurement

Domaines: Sciences de l'ingénieur [physics]

Stéphane Piotrowicz, Olivier Jardel, Jean-Claude Jacquet, D. Lancereau, Raphaël Aubry, et al.. 160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management. 34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, Oct 2012, La Jolla, CA, United States. pp.1-4, ⟨10.1109/CSICS.2012.6340059⟩. ⟨hal-00801142⟩