Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering

C. Ostermaier , G. Pozzovivo , J.F. Carlin , B. Basnar , W. Schrenk , A.M. Andrews , Y. Douvry , Christophe Gaquière (1) , Jean-Claude de Jaeger , L. Toth , B. Pecz , M. Gonschorek , E. Feltin , N. Grandjean , G. Strasser , D. Pogany , J. Kuzmik

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, et al.. Improvements of high performance 2-nm-thin InAlN/AlN barrier devices by interface engineering. 30th International Conference on the Physics of Semiconductors, ICPS-30, 2010, Seoul, South Korea. pp.905-906, ⟨10.1063/1.3666669⟩. ⟨hal-00800884⟩