Achievement and perspective of GaN technology for microwave applications

Sylvain Laurent Delage (1) , Erwan Morvan (1) , Nicolas Sarazin (1) , Raphaël Aubry (1) , Eric Chartier (1) , Olivier Jardel (1) , Marie-Antoinette Di Forte-Poisson (1) , Christian Dua (1) , Jean-Claude Jacquet (1) , Stéphane Piotrowicz (1) , Anna Piotrowska (2) , Eliana Kaminska (2) , Jean-Claude de Jaeger (3) , Christophe Gaquière (3) , Ulrich Heinlen (4) , Ehrard Kohn (5) , Mohammed Alomari (5) , David Maier (5) , Ján Kuzmík (6) , Dionyz Pogany (6)

1 III-V Lab - Alcatel-Thales III-V Lab
2 Institute of Electron Technology
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
4 microGaN GmbH
5 INT - University of Ulm. - Institute of Communications Engineering [Ulm]
6 TU Wien - Vienna University of Technology = Technische Universität Wien

This paper give an overview of some recent results obtained by Alcatel-Thales III-V Lab using emerging AlGaN/GaN HEMT technology. This technology is very suitable up to Ku-Band and offer impressive power performances. The second part of the presentation will give an overview of results obtained using new InAlN/GaN heterostructures, which is expected to offer similar output power but with improved efficiencies and to cope with higher working frequencies.

Mots clés: Gallium nitride; Microwave technology; HEMTs; Aluminum gallium nitride; Silicon carbide; Frequency; Photonic band gap; Electron mobility; Charge carrier density; Substrates

Domaines: Sciences de l'ingénieur [physics]

Sylvain Laurent Delage, Erwan Morvan, Nicolas Sarazin, Raphaël Aubry, Eric Chartier, et al.. Achievement and perspective of GaN technology for microwave applications. 18th International Conference on Microwave, Radar and Wireless Communications, MIKON-2010, Jun 2010, Vilnius, Lithuania. pp.314-318. ⟨hal-00800875⟩