Combined STM and four-probe resistivity measurements on single semiconductor nanowires

Maxime Berthe (1) , Corentin Durand (1) , Tao Xu (1) , Jean-Philippe Nys (1) , Philippe Caroff (1) , B. Grandidier (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

Transport measurements on free-standing nanostructures with clean and reconstructed facets require an instrumentation based on electrical probes that scan materials at the atomic scale with fine tuning in the establishment of the electrical contact. We describe a multiple probe tunneling microscope that operates under a scanning electron microscope in ultra-high vacuum and fulfills these requirements thanks to a unique control system. We show how this instrument is well adapted to study the resistivity of semiconductor nanowires.

Mots clés: Scanning Tunneling Microscope Image; Switch Unit; Probe Scan Tunneling Microscope; Single Semiconductor; Resolution Scanning Tunneling Microscope

Domaines: Sciences de l'ingénieur [physics]

Maxime Berthe, Corentin Durand, Tao Xu, Jean-Philippe Nys, Philippe Caroff, et al.. Combined STM and four-probe resistivity measurements on single semiconductor nanowires. 1st AtMol International Workshop on Atomic Scale Interconnection Machine, Jun 2011, Singapore, Singapore. pp.107-118, ⟨10.1007/978-3-642-28172-3_8⟩. ⟨hal-00800076⟩