Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.

Pierre Lefebvre (1) , Christelle Brimont (1) , Pierre Valvin (1) , H. Miyake (2) , K. Hiramatsu , Bernard Gil (1)

1 L2C - Laboratoire Charles Coulomb
2 Optoelectronics Lab

Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Pierre Lefebvre, Christelle Brimont, Pierre Valvin, H. Miyake, K. Hiramatsu, et al.. Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.. International Workshop on Nitride semiconductors (IWN 2012)., Oct 2012, Sapporo, Japan. ⟨hal-00797472⟩