Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN. - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2009

Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.

Résumé

Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.
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Dates et versions

hal-00797195 , version 1 (05-03-2013)

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  • HAL Id : hal-00797195 , version 1

Citer

Pierre Corfdir, Pierre Lefebvre, J. Ristic, Samuel Sonderegger, Laurent Balet, et al.. Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.. Int. Conf. on Nitride Semiconductors - ICNS8., Oct 2009, Jeju, South Korea. ⟨hal-00797195⟩
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