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Growth mechanism and properties of InGaN insertions in GaN nanowires

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https://hal.archives-ouvertes.fr/hal-00788827
Contributor : Bruno Gayral Connect in order to contact the contributor
Submitted on : Friday, February 15, 2013 - 11:50:38 AM
Last modification on : Monday, November 29, 2021 - 8:26:04 AM

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Gabriel Tourbot, Catherine Bougerol, Frank Glas, Luiz Fernando Zagonel, Z. Mahfoud, et al.. Growth mechanism and properties of InGaN insertions in GaN nanowires. Nanotechnology, Institute of Physics, 2012, 23, pp.135703. ⟨10.1088/0957-4484/23/13/135703⟩. ⟨hal-00788827⟩

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