Imaging the Single Event Burnout sensitive volume of vertical power MOSFETs using the laser Two-Photon Absorption technique

Abstract : The Single Event Burnout sensitive volume of power MOSFETs is investigated using the laser Two-Photon Absorption Technique. A first discussion about the efficiency of this technique is given.
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Communication dans un congrès
12th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2011, Seville, Spain. pp.434-441, 2012, <10.1109/RADECS.2011.6131350>
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https://hal.archives-ouvertes.fr/hal-00772102
Contributeur : Frédéric Darracq <>
Soumis le : jeudi 10 janvier 2013 - 09:13:29
Dernière modification le : jeudi 10 janvier 2013 - 09:13:29

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Frédéric Darracq, Nogaye Mbaye, Camille Larue, V. Pouget, Stephane Azzopardi, et al.. Imaging the Single Event Burnout sensitive volume of vertical power MOSFETs using the laser Two-Photon Absorption technique. 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2011, Seville, Spain. pp.434-441, 2012, <10.1109/RADECS.2011.6131350>. <hal-00772102>

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