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Doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide

Abstract : We report an experimental determination of the doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide. Low temperature transport measurements down to 360 mK and temperature dependent Raman experiments down to 5 K, together with secondary ion mass spectroscopy profiling, suggest a critical aluminum concentration lying between 6.4 and 8.7 1020 cm−3 for the metal-insulator transition in these epilayers grown by the vapor-liquid-solid technique. Preliminary indications of a superconducting transition in the metallic sample are presented.
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Philipp Achatz, Julien Pernot, C. Marcenat, Jozef Kacmarcik, Gabriel Ferro, et al.. Doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide. Applied Physics Letters, American Institute of Physics, 2008, 92, pp.072103. ⟨10.1063/1.2885081⟩. ⟨hal-00761033⟩

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