Superconducting group-IV semiconductors
Résumé
We present recent achievements and predictions in the field of doping-induced superconductivity in column IV-based covalent semiconductors, with a focus on Bdoped diamond and silicon. Despite the amount of experimental and theoretical work produced over the last four years, many open questions and puzzling results remain to be clarified. The nature of the coupling (electronic correlation and/or phonon-mediated), the relationship between the doping concentration and the critical temperature (TC), which determines the prospects for higher transition temperatures, as well as the influence of disorder and dopant homogeneity, are debated issues that will determine the future of the field. We suggest that innovative superconducting devices, combining specific properties of diamond or silicon, and the maturity of semiconductor-based technologies, will soon be developed.
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