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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2009

Low-temperature transport in highly boron-doped nanocrystalline diamond

Résumé

We studied the transport properties of highly boron-doped nanocrystalline diamond thin films at temperatures down to 50 mK. The system undergoes a doping-induced metal-insulator transition with an interplay between intergranular conductance g and intragranular conductance g0, as expected for a granular system. The conduction mechanism in the case of the low-conductivity films close to the metal-insulator transition has a temperature dependence similar to Efros-Shklovskii type of hopping. On the metallic side of the transition, in the normal state, a logarithmic temperature dependence of the conductivity is observed, as expected for a metallic granular system. Metallic samples far away from the transition show similarities to heavily borondoped single-crystal diamond. Close to the transition, the behavior is richer. Global phase coherence leads in both cases to superconductivity also checked by ac susceptibility , but a peak in the low-temperature magnetoresistance measurements occurs for samples close to the transition. Corrections to the conductance according to superconducting fluctuations account for this negative magnetoresistance.
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Dates et versions

hal-00760974 , version 1 (05-12-2012)

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Philipp Achatz, Wojciech Gajewski, Etienne Bustarret, C. Marcenat, Raoul Piquerel, et al.. Low-temperature transport in highly boron-doped nanocrystalline diamond. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79 (20), pp.201203(R). ⟨10.1103/PhysRevB.79.201203⟩. ⟨hal-00760974⟩
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