An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators

Dominique Bergogne (1) , Fabien Dubois (2) , Christian Martin (1) , Khalil El Falahi (1) , Luong Viet Phung (1) , Cyril Buttay (1) , Sonia Dhokkar (2) , Bruno Allard (3) , Régis Meuret (2) , Hervé Morel (1)

1 AMPERE - Ampère
2 SAFRAN, Grp Hispano Suiza
3 EE - Ampère, Département Energie Electrique

Normally-On Silicon Carbide (SiC) JFETs are good candidates for power switches in high temperature applications, in Three-Phase Voltage-Fed Inverters used to drive Electro-Mechanical Actuators (EMA) for the more electrical aircraft where the ambient varies from -55 °C to 200 °C. The power of the EMA is in the 1 to 5 kW range, the DC bus voltage is 540 V. It is also necessary to implement passive subsystems such as Electro-Magnetic-Interference (EMI) flters, power inductors, transformers, packaging and interconnection solution that withstand the wide temperature range. The gate driver for normally-On devices must include a safe solution against short-circuit in the event of a power supply failure. The experimental converter is built using engineering samples such as SiC JFETs, SOI drivers and laboratory made components such as inductive wire wound, nano-crystalline core components, SOI integrated driver, assembled with a high temperature package and technology. Finally, the Smart EMA test bench is presented.

Mots clés: JFET gate driver; Voltage Feed Inverter; SiC JFET; Normally-On device; Input EMI filter

Domaines: Energie électrique

Dominique Bergogne, Fabien Dubois, Christian Martin, Khalil El Falahi, Luong Viet Phung, et al.. An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators. HiTEC 2012, May 2012, Albuquerque, United States. 6p. ⟨hal-00760366⟩