Effect of oxygen pressure on the structural and magnetic properties of thin ZnMnO films

A. Khodorov (1) , A.G. Rolo (1) , El-Kebir Hlil (2) , J. Ayres de Campos (1) , O. Karzazi (1) , S. Levichev (1) , M.R. Correia (3) , A. Chahboun (4, 1) , M.J.M. Gomes (1)

1 CFUM - Centro de Física da Universidade do Minho
2 NEEL - MagSup - Magnétisme et Supraconductivité
3 Universidade de Aveiro
4 Faculté des sciences et Techniques de Tanger

Thin ZnMnO films were grown by pulsed laser deposition on glass substrates under oxygen pressure. The structural properties were studied by X-ray diffraction and Raman techniques, while the conductivity was characterized by the Hall effect. The oxygen pressure during the growth seems to govern the structural and the electrical properties of the thin ZnMn films. In fact, the micron size grain and the resistivity of the ZnMnO increase with the partial oxygen pressure. However, no evident effect was observed on the magnetic behavior. Electronic structure calculations were performed and magnetic moment carried by Mn atom was computed as well.

Mots clés: Physical Sciences

Domaines: Physique [physics]

A. Khodorov, A.G. Rolo, El-Kebir Hlil, J. Ayres de Campos, O. Karzazi, et al.. Effect of oxygen pressure on the structural and magnetic properties of thin ZnMnO films. European Physical Journal: Applied Physics, 2012, 57 (1), pp.10301. ⟨10.1051/epjap/2011110380⟩. ⟨hal-00759672⟩