The effect of the active layer thickness on the performance of pentacene-based phototransistors - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Synthetic Metals Année : 2012

The effect of the active layer thickness on the performance of pentacene-based phototransistors

Aumeur El Amrani
  • Fonction : Auteur
Bruno Lucas
Bernard Ratier

Résumé

n this paper, we discuss the fabrication and characterization of pentacene-basedphototransistors using indium tin oxide as a transparent electrical gate and PMMA as a transparent dielectric gate. The photoelectric properties with different pentacene film thicknesses were characterized under ultraviolet (365 nm) illumination. We observed that for the thinner pentacene films, the threshold voltage upon UV illumination was shifted from its initial value in the dark to a positive voltage of more than 16 V, whereas the shift was only of 3 V for thicker films. Thus, we obtained a higher photosensitivity of 6.5 × 104 for thinner pentacene films, which indicates that the organic thin film transistors could find use in photodetector applications.

Dates et versions

hal-00757479 , version 1 (27-11-2012)

Identifiants

Citer

Aumeur El Amrani, Bruno Lucas, Bernard Ratier. The effect of the active layer thickness on the performance of pentacene-based phototransistors. Synthetic Metals, 2012, 161 (23-24), pp 2566-2569. ⟨10.1016/j.synthmet.2011.08.011⟩. ⟨hal-00757479⟩

Collections

UNILIM CNRS XLIM
36 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More