Analyse multivariée d'une cartographie raman: étude d'un échantillon de carbure de silicium irradié par des ions Au6+
Résumé
Multivariate analysis of a Raman mapping: Study of an Au6+ irradiated Silicon carbide. In order to probe the spatial distribution of damage caused by ion irradiation in 6H-SiC, a Raman line-mapping in depth has previously been recorded: F. Linez et al., I Raman Spectrosc. (2012), in press. Visual analysis of the mapping allows distinguishing two main areas: damaged and undamaged. The damaged area can be divided in three sub-areas. Previously, we reconstructed the mapping by a linear combination of three spectra chosen arbitrarily in the mapping. Here, we go beyond this rather empirical procedure and provide a more rigorous justification for the sub-areas, using the concept of blind source separation (SVD, ICA and BPSS). This comparison allows validating the choice of sub-areas, whose existence is supported by all three techniques.