Determination of the disorder profile in an ion-implanted silicon carbide single crystal by Raman spectroscopy

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Journal articles
Journal of Raman Spectroscopy, Wiley-Blackwell, 2012, 43, pp.939-944. <10.1002/jrs.3118>


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Submitted on : Monday, November 12, 2012 - 4:34:37 PM
Last modification on : Monday, November 12, 2012 - 4:34:37 PM

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F. Linez, A. Canizares, A. Gentils, G. Guimbretiere, P. Simon, et al.. Determination of the disorder profile in an ion-implanted silicon carbide single crystal by Raman spectroscopy. Journal of Raman Spectroscopy, Wiley-Blackwell, 2012, 43, pp.939-944. <10.1002/jrs.3118>. <hal-00750912>

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