Determination of the disorder profile in an ion-implanted silicon carbide single crystal by Raman spectroscopy

F. Linez; A. Canizares; A. Gentils; G. Guimbretiere; P. Simon; M.-F. Barthe

doi:10.1002/jrs.3118

Determination of the disorder profile in an ion-implanted silicon carbide single crystal by Raman spectroscopy

F. Linez ¹ A. Canizares ¹ A. Gentils ² G. Guimbretiere ¹ P. Simon ¹ M.-F. Barthe ¹

1 CEMHTI - Conditions Extrêmes et Matériaux : Haute Température et Irradiation

2 CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse

Document type :

Journal articles

Journal of Raman Spectroscopy, Wiley, 2012, 43, pp.939-944. <10.1002/jrs.3118>

Domain :

Chemical Sciences / Material chemistry

https://hal.archives-ouvertes.fr/hal-00750912
Contributor : Patrick Simon <>
Submitted on : Monday, November 12, 2012 - 4:34:37 PM
Last modification on : Friday, December 4, 2015 - 11:39:54 AM

Determination of the disorder profile in an ion-implanted silicon carbide single crystal by Raman spectroscopy

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