Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate

Jean Lorenzzi (1) , Nicoletta Jegenyes (1) , Mihai Lazar (2) , Dominique Tournier (2) , Davy Carole (1) , François Cauwet (1) , Gabriel Ferro (1)

1 LMI - Laboratoire des Multimatériaux et Interfaces
2 AMPERE - Ampère

In this work we report on the study of twin boundary (TB) evolution during heteroepitaxial growth of 3C-SiC on patterned 4H-SiC(0001) substrate by vapour-liquid-solid (VLS) mechanism. Ge 50Si 50 melt was used at a temperature of 1450°C. 3C-SiC deposit was obtained on top and outside the mesas. Some lateral enlargement of these mesas was observed but it was systematically homoepitaxial. Elimination of TBs inside the 3C-SiC deposit on top of the mesas was observed for specific mesa shape and/or orientation of the sidewalls. Though three-fold or six-fold symmetry mesas are recommended for TB elimination, originally circular mesas lead also to the same result due to initial faceting toward hexagonal shape.

Mots clés: Twin boundaries; Hexagonal shapes; Homoepitaxial; Patterned substrates; Heteroepitaxial; Mesa shape; VLS growth; 3C-SiC Heteroepitaxy; Patterned substrate; 4H-SiC substrate; Circular mesa; Vapour-Liquid-Solid mechanisms; Twin boundary

Domaines: Energie électrique

Jean Lorenzzi, Nicoletta Jegenyes, Mihai Lazar, Dominique Tournier, Davy Carole, et al.. Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate. HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩. ⟨hal-00747669⟩