Physical modelling of 4H-SiC PiN diodes

Craig A. Fischer (1) , Michael R. Jennings (1) , Angus T. Bryant (1) , Amador Pérez-Tomás (2) , Peter M. Gammon (1) , Pierre Brosselard (3) , Philippe Godignon (2) , Philip A. Mawby (1)

1 University of Warwick [Coventry]
2 CNM - Centro Nacional de Microelectronica [Spain]
3 AMPERE - Ampère

A physical electro-thermal model of the 4H-SiC PiN diode has been developed, and compared with both finite-element simulations and experimental results. Good matching for both inductive switching and conduction characteristics has been observed for a range of operating temperatures, discussions and results are presented.

Mots clés: 4H-SiC; Operating temperature; Physical modelling; Electro-thermal model; Electro-thermal modeling; PiN diode; Finite element simulations; Inductive switching

Domaines: Energie électrique

Craig A. Fischer, Michael R. Jennings, Angus T. Bryant, Amador Pérez-Tomás, Peter M. Gammon, et al.. Physical modelling of 4H-SiC PiN diodes. CSCRM, Sep 2011, Cleveland, United States. pp.993-996, ⟨10.4028/www.scientific.net/MSF.717-720.993⟩. ⟨hal-00747601⟩