Temperature-Pressure-Sintering (TPS) diagram approach for sintering of silicon.

J.M. Lebrun (1) , C. Pascal (1) , J. M. Missiaen (1)

1 SIMaP - Science et Ingénierie des Matériaux et Procédés

Temperature-(water vapor) Pressure-Sintering (TPS) diagrams were established to control the microstructure evolution and densification during sintering of silicon. Experiments were performed under controlled humidified atmospheres and corroborated diagram predictions.

Domaines: Matériaux

J.M. Lebrun, C. Pascal, J. M. Missiaen. Temperature-Pressure-Sintering (TPS) diagram approach for sintering of silicon.. Materials Letters, 2012, 83, pp.65-68. ⟨10.1016/j.matlet.2012.06.006⟩. ⟨hal-00747557⟩