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Communication Dans Un Congrès Année : 2011

OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients

Duy Minh Nguyen
  • Fonction : Auteur
Christophe Raynaud
Mihai Lazar
Nicolas Dheilly
  • Fonction : Auteur
  • PersonId : 859353
Dominique Tournier
Dominique Planson

Résumé

Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with a very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact ionization coefficients for 4H-SiC have been extracted in the electric field range from 3 to 4.8 MV/cm. In combination with ionization coefficients in our previous paper extracted from diodes with a low-doped avalanche region, we propose a set of parameters of impact ionization coefficients for 4H-SiC, applicable to a wide electric field range.
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Dates et versions

hal-00747298 , version 1 (31-10-2012)

Identifiants

  • HAL Id : hal-00747298 , version 1

Citer

Duy Minh Nguyen, Christophe Raynaud, Mihai Lazar, Gontran Pâques, Sigo Scharnholz, et al.. OBIC measurements on avalanche diodes in 4H-SiC for the determination of impact ionization coefficients. CSCRM, Sep 2011, Cleveland, United States. ⟨hal-00747298⟩
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