Local boron doping quantification in homoepitaxial diamond structures

D. Araujo (1) , Philipp Achatz (2) , R. El Bouayadi (3) , A. J. Garcia (1) , M. P. Alegre (1) , M. P. Villar (1) , François Jomard (4) , Etienne Bustarret (2)

1 Departamento Ciencia de los Materiales e IMyQI
2 NEEL - SC2G - Semi-conducteurs à large bande interdite
3 Faculté Pluridisciplinaire de Nador
4 GEMAC - Groupe d'Etude de la Matière Condensée

The capability of transmission electron microscopy (TEM) using the high angle annular dark field mode (HAADF, also labelled Z-contrast) to quantify boron concentration, in the high doping range between 10(19)cm(-3) and 10(21)cm(-3), is demonstrated. Thanks to the large relative variation of atomic numberZbetween carbon and boron, doping concentration maps and profiles are obtained with a nanometer-scale resolution. A novel numerical simulation procedure allows the boron concentration quantification and demonstrates the high sensitivity and spatial resolution of the technique.

Domaines: Micro et nanotechnologies/Microélectronique

D. Araujo, Philipp Achatz, R. El Bouayadi, A. J. Garcia, M. P. Alegre, et al.. Local boron doping quantification in homoepitaxial diamond structures. Diamond and Related Materials, 2010, 19 (7-9), pp.972-975. ⟨10.1016/j.diamond.2010.02.043⟩. ⟨hal-00740929⟩