Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes

Abstract : A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation of a regular (4 nm roughness) Ib diamond plate. This was then graphitized by annealing before being selectively etched. We have used O(+) at 240 keV, the main process variables being the ion fluence (ranging from 3 x 10(15) to 3 x 10(17)cm(-2)) and the final etching process (wet etch, H(2) plasma, and annealing in air). The substrates were characterized by atomic force microscopy, optical profilometry and white beam X-ray topography. The influence of the various process parameters on the resulting lift-off efficiency and final surface roughness is discussed. An O(+) fluence of 2 x 10(17)cm(-2) was found to result in sub-nanometer roughness over tens of mu m(2).
Type de document :
Article dans une revue
physica status solidi (a), Wiley, 2011, 208 (9), pp.2057-2061. <10.1002/pssa.201100038>


https://hal.archives-ouvertes.fr/hal-00740914
Contributeur : David Eon <>
Soumis le : jeudi 11 octobre 2012 - 12:52:24
Dernière modification le : vendredi 4 mars 2016 - 01:04:55

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Thu Nhi Tran Thi, Bruno Fernandez, David Eon, Etienne Gheeraert, Juergen Haertwig, et al.. Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes. physica status solidi (a), Wiley, 2011, 208 (9), pp.2057-2061. <10.1002/pssa.201100038>. <hal-00740914>

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