Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

C. Fernandez-Lorenzo (1) , D. Araujo (2) , J. Martin (1) , R. Alcantara (1) , J. Navas (1) , M. P. Villar (2) , M. P. Alegre (2) , Pierre-Nicolas Volpe (3) , Franck Omnès (3) , Etienne Bustarret (3)

1 Departamento Química Física
2 Departamento Ciencia de los Materiales e IMyQI
3 NEEL - SC2G - Semi-conducteurs à large bande interdite

A homoepitaxial boron-doped diamond single layer is investigated by means of Fourier transformed infrared spectroscopy (FTIR) and cathodoluminescence (CL). Both techniques are shown to be complementary. mu-FTIR mapping allows to determine the location of active boron while CL allows discernability between passivation and compensation. Hydrogen incorporation during chemical vapour deposition (CVD) growth is revealed to passivate boron acceptors. The obtained results highlight that plasma etching can induce a dissociation of B-H centres.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

C. Fernandez-Lorenzo, D. Araujo, J. Martin, R. Alcantara, J. Navas, et al.. Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers. Diamond and Related Materials, 2010, 19 (7-9), pp.904-907. ⟨10.1016/j.diamond.2010.02.030⟩. ⟨hal-00740204⟩