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Article Dans Une Revue Diamond and Related Materials Année : 2012

In situ etching-back processes for a sharper top interface in boron delta-doped diamond structures

Résumé

One of the main challenges of delta-doping of diamond with boron resides in minimizing the width and optimizing the structural quality of the interface region between the heavily-doped ultra-thin layer and the non intentionally doped high mobility epilayers. In this work, we present an in situ etching-back approach to this problem. In particular, a careful SIMS profiling of the top interface shows that advanced gas switching procedures and adequate in situ O-2 and H-2 plasma etch steps lead to a rising depth lower than 2 nm per decade over 3 to 4 orders of magnitude of boron concentration. A specificity of the present work is that the multilayer structures were obtained without interrupting the microwave plasma during the whole process.

Dates et versions

hal-00739488 , version 1 (08-10-2012)

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Citer

Alexandre Fiori, Thu Nhi Tran Thi, Gauthier Chicot, François Jomard, Franck Omnès, et al.. In situ etching-back processes for a sharper top interface in boron delta-doped diamond structures. Diamond and Related Materials, 2012, 24, pp.175-178. ⟨10.1016/j.diamond.2012.01.018⟩. ⟨hal-00739488⟩
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