Impact of SiC Components on the EMC Behaviour of a Power Electronics Converter

Eliana Rondon (1) , Florent Morel (1) , Christian Vollaire (1) , Jean-Luc Schanen (2)

1 AMPERE - Ampère
2 G2ELab - Laboratoire de Génie Electrique de Grenoble

In this paper, the EMC behaviour of a switching cell is studied in a standardized environment, using both experiments and simulations. The environment model has been validated separately. The EMC emission using SiC JFET and Si MOSFET are compared. With the SiC JFET the simulation study shows a good agreement with the experiment up to 20MHz while with the Si MOSFET the validity domain of the model is less than 500kHz due to the simplistic model included in the SABER library. The experimental study shows that the EMC perturbations measured at the LISN are 10dB larger with the SiC JFET than with the Si MOSFET at a frequency range from 200kHz to 4MHz.

Domaines: Energie électrique

Eliana Rondon, Florent Morel, Christian Vollaire, Jean-Luc Schanen. Impact of SiC Components on the EMC Behaviour of a Power Electronics Converter. ECCE, Sep 2012, Raleigh, United States. pp.4411, ⟨10.1109/ECCE.2012.6342222⟩. ⟨hal-00739027⟩