Hafnium Silicate dielectrics fabricated by RF magnetron sputtering.

L. Khomenkova (1) , X. Portier (1) , P. Marie (1) , F. Gourbilleau (1)

1 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique

Structural and composition properties of hafnium silicate layers fabricated by RF magnetron sputtering were studied by means of spectroscopic ellipsometry, X-ray diffraction, transmission electron microscopy and attenuated total reflection infrared spectroscopy with respect to the deposition parameters and postdeposition annealing treatment. The variation of the deposition conditions allows the temperature of amorphous-crystalline phase transformation of pure hafnium oxide layers to be controlled. It is shown that the silicon incorporation in oxide matrix prevents the formation of interfacial silicon oxide layer and plays a major role in the stability of the structure of hafnium based layers remaining an amorphous state upon annealing at 900-950 °C.

Mots clés: XRD; TEM; High-k dielectrics; Hafnium oxide; ATR; Hafnium silicate; RF magnetron sputtering

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique / photonique; Micro et nanotechnologies/Microélectronique

L. Khomenkova, X. Portier, P. Marie, F. Gourbilleau. Hafnium Silicate dielectrics fabricated by RF magnetron sputtering.. Journal of Non-Crystalline Solids, 2011, 357 (8-9), pp.1860-1865. ⟨10.1016/j.jnoncrysol.2010.12.048⟩. ⟨hal-00737872⟩