Effect of the Si excess on the structure and the optical properties of Nd-doped Si-rich silicon oxide

Chuan-Hui Liang (1) , Olivier Debieu (1) , Yong-Tao An (1) , Larysa Khomenkova (1) , Julien Cardin (1) , Fabrice Gourbilleau (1)

1 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique

Nd-doped Si-rich silicon oxide thin films were produced by radio frequency magnetron co-sputtering of three confocal cathodes: Si, SiO2, and Nd2O3, in pure argon plasma at 500°C. The microstructure and optical properties of the films were investigated versus silicon excess and post-deposition annealing treatment by means of ellipsometry and Fourier transform infrared spectrometry as well as by the photoluminescence method. A notable emission from Nd3+ ions was obtained for the as-deposited sample, while the films annealed at 900°C showed the highest peak intensity. The maximum emission was observed for the films with 4.7at.% of Si excess.

Mots clés: Si-rich-silicon oxide; Neodymium; Magnetron sputtering; Refractive index; Infrared absorption; Photoluminescence

Domaines: Optique / photonique

Chuan-Hui Liang, Olivier Debieu, Yong-Tao An, Larysa Khomenkova, Julien Cardin, et al.. Effect of the Si excess on the structure and the optical properties of Nd-doped Si-rich silicon oxide. Journal of Luminescence, 2012, 132 (12), pp.3118-3121. ⟨10.1016/j.jlumin.2012.01.046⟩. ⟨hal-00736631v2⟩