Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

Jean Baptiste Fonder (1, 2) , Laurence Chevalier (2) , Cécile Genevois (2) , Olivier Latry (2) , Cédric Duperrier (1) , Farid Temcamani (1) , Hichame Maanane (3)

1 ETIS - UMR 8051 - Equipes Traitement de l'Information et Systèmes
2 GPM - Groupe de physique des matériaux
3 Thales Air Systems

This paper deals with the physical study of the Schottky contact after pulsed-RF saturated life test under enhanced drain bias voltage on power HEMTs. Electrical measurements showed a pinch-off voltage (VP) shift, a decrease of output power and average drain current while Photon Emission Microscopy (PEM) was used to identify the degradation distribution along the 80 fingers die. Finally, Transmission Electron Microscopy (TEM) is performed to point out the different Schottky degradation between a central finger and an outer one.

Domaines: Electronique

Jean Baptiste Fonder, Laurence Chevalier, Cécile Genevois, Olivier Latry, Cédric Duperrier, et al.. Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. 23rd EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS, Oct 2012, Cagliari, Italy. pp.2205. ⟨hal-00735910⟩