Extreme dielectric strength in boron doped homoepitaxial diamond

Pierre-Nicolas Volpe (1) , Pierre Muret (1) , Julien Pernot (1) , Franck Omnès (1) , Tokuyuki Teraji (2) , Yasuo Koide (2) , François Jomard (3) , Dominique Planson (4) , Pierre Brosselard (4) , Nicolas Dheilly (4) , Bertrand Vergne (5) , Sigo Scharnholz (5)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite
2 NIMS - National Institute for Materials Science
3 GEMAC - Groupe d'Etude de la Matière Condensée
4 AMPERE - Ampère
5 ISL - Institut franco-allemand de recherches de Saint-Louis

The fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concentration below 10(16) cm(-3) in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Energie électrique

Pierre-Nicolas Volpe, Pierre Muret, Julien Pernot, Franck Omnès, Tokuyuki Teraji, et al.. Extreme dielectric strength in boron doped homoepitaxial diamond. Applied Physics Letters, 2010, 97 (22), pp.223501. ⟨10.1063/1.3520140⟩. ⟨hal-00734714⟩