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Communication Dans Un Congrès Année : 2012

20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate

Résumé

We report original results on GSMBE grown InAs/InP QD structures. Three single section devices show passive mode locking from 20 GHz to 83 GHz with low RF spectral width (32 kHz) and low pulse duration of 1.3 ps. We report also a double wavelength emission at high injection current, associated with degradation of mode locking properties. The real cause of these phenomena is still unclear.
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Dates et versions

hal-00726881 , version 1 (31-08-2012)

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Kamil Klaime, Rozenn Piron, Cyril Paranthoen, Thomas Batte, Frederic Grillot, et al.. 20 GHz to 83 GHz single section InAs/InP quantum dot mode-locked lasers grown on (001) misoriented substrate. 24th International Conference on Indium Phosphide and Related Materials (IPRM 2012), Aug 2012, Santa Barbara, United States. pp.181-184, ⟨10.1109/ICIPRM.2012.6403352⟩. ⟨hal-00726881⟩
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