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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2008

Ripples in epitaxial graphene on the Si-terminated SiC (0001) surface

Résumé

Interaction with a substrate can modify the graphene honeycomb lattice and thus alter its out- standing properties. This could be particularly true for epitaxial graphene where the carbon layers are grown from the SiC substrate. Extensive ab initio calculations supported by Scanning Tunneling Microscopy experiments demonstrate here that the substrate indeed induces a strong nanostruc- turation of the interface carbon layer. It generates an apparent 6x6 modulation different from the interface 6√3×6√3R30 symmetry used for the calculation. The top carbon layer roughly follows the interface layer morphology. This creates soft 6x6 ripples in the otherwise graphene-like hon- eycomb lattice. The wavelength and height of the ripples are much smaller than the one found in exfoliated graphene. Their formation mechanism also differs: They are due to the weak interaction with the interface layer and not to a roughening of the plane due to the instability of a strictly two-dimensional crystal.
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Dates et versions

hal-00726728 , version 1 (31-08-2012)

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François Varchon, Pierre Mallet, Jean-Yves Veuillen, Laurence Magaud. Ripples in epitaxial graphene on the Si-terminated SiC (0001) surface. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77 (23), pp.235412. ⟨10.1103/PhysRevB.77.235412⟩. ⟨hal-00726728⟩
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