Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain

Cédric Robert Robert (1) , Mathieu Perrin (1) , Charles Cornet (1) , Jacky Even (1) , Jean-Marc Jancu (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON

Band structure calculations of strained Ga(NAsP) quantum wells are performed within the framework of the extended-basis sp3d5s* tight-binding model. The nitrogen contribution is taken into account by introducing an additional sN orbital into the tight-binding basis. Biaxial strain effects on the band alignment of bulk Ga(NAsP) is studied for the ultra-diluted regime. We demonstrate a good agreement with experimental data both for transition energies and optical gain in Ga(NAsP) quantum wells. The effect of N incorporation in the laser active areas is simulated.

Domaines: Optique / photonique

Cédric Robert Robert, Mathieu Perrin, Charles Cornet, Jacky Even, Jean-Marc Jancu. Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain. Applied Physics Letters, 2012, 100 (11), pp.111901. ⟨10.1063/1.3694028⟩. ⟨hal-00725676⟩