Behavioral-Modeling Methodology to Predict Electrostatic-Discharge Susceptibility Failures at System Level : an IBIS Improvement

Nicolas Monnereau (1) , Fabrice Caignet (1) , Nicolas Nolhier (1) , David Trémouilles (1) , Marise Bafleur (1)

1 LAAS - Laboratoire d'analyse et d'architecture des systèmes

In this paper, a behavioral modeling methodology to predict ElectroStatic-Discharge (ESD) failures at system level is proposed and validated. The proposed models enable time domain simulation to determine voltage and current waveforms inside and outside an IC during ESD events in order to predict the susceptibility of an electronic system to ESD. Very-high-speed integrated circuit Hardware Description Language - Analog and Mixed Signals (VHDL-AMS) is used as the description language. The purpose of this methodology is based on the improvement of Input Output Buffer Information Specification (IBIS) models widely used in signal integrity (SI) simulation. In this paper the additional information required to be added to IBIS files is described, and comparison between simulations and measurements are exposed.

Mots clés: Electrostatic discharge (ESD); Input Output Buffer Information Specification (IBIS); behavioral modeling; ElectroMagnetic Compatibility (EMC); Time-domain simulation; VHDL-AMS

Domaines: Micro et nanotechnologies/Microélectronique

Nicolas Monnereau, Fabrice Caignet, Nicolas Nolhier, David Trémouilles, Marise Bafleur. Behavioral-Modeling Methodology to Predict Electrostatic-Discharge Susceptibility Failures at System Level : an IBIS Improvement. Int. Symposium on Electromagnetic Compatibility (EMC Europe 2011), Sep 2011, YORK, United Kingdom. pp.457-463. ⟨hal-00722643⟩