Photoluminescence of GaN microcrystallites prepared by a new solvothermal process

Cécile Collado (1) , Graziella Goglio (1) , Gérard Demazeau (1) , Albert-Serge Barriere (2) , Lionel Hirsch (2) , Mathieu Leroux (3)

1 ICMCB - Institut de Chimie de la Matière Condensée de Bordeaux
2 IXL - Laboratoire d'études de l'intégration des composants et systèmes électroniques
3 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

GaNmicrocrystallites have been prepared by asolvothermalprocess. The influence of the synthesis temperature on the crystallinity of the resulting GaN has been studied on three samples, prepared at 400, 600 and 800°C in the same pressure conditions (150 MPa) and duration (6 h). The resulting powders were characterized by several techniques: X-ray diffraction to evaluate the reaction rate, scanning electron microscopy (SEM) to determine the morphology and size of the microcrystallites and photoluminescence to evaluate the quality of the powders.

Mots clés: Nitrides, Crystal growth, High pressure, Optical properties

Domaines: Micro et nanotechnologies/Microélectronique; Matériaux

Cécile Collado, Graziella Goglio, Gérard Demazeau, Albert-Serge Barriere, Lionel Hirsch, et al.. Photoluminescence of GaN microcrystallites prepared by a new solvothermal process. Materials Research Bulletin, 2002, 1 (5), pp.841-848. ⟨10.1016/S0025-5408(02)00716-X⟩. ⟨hal-00183531⟩