Electron-phonon and electron-electron interactions in organic field effect transistors

Simone Fratini (1) , A.F. Morpurgo (2) , S. Ciuchi (3)

1 NEEL - TMC - Théorie de la Matière Condensée
2 TU Delft - Delft University of Technology
3 UNIVAQ - Università degli Studi dell'Aquila = University of L'Aquila

Recent experiments have demonstrated that the performances of organic FETs strongly depend on the dielectric properties of the gate insulator. In particular, it has been shown that the temperature dependence of the mobility evolves from a metallic-like to an insulating behavior upon increasing the dielectric constant of the gate material. This phenomenon can be explained in terms of the formation of small polarons, due to the polar interaction of the charge carriers with the phonons at the organic/dielectric interface. Building on this model, the possible consequences of the Coulomb repulsion between the carriers at high concentrations are analyzed.

Mots clés: Physical Sciences

Domaines: Physique [physics]

Simone Fratini, A.F. Morpurgo, S. Ciuchi. Electron-phonon and electron-electron interactions in organic field effect transistors. Journal of Physics and Chemistry of Solids, 2008, 69 (9), pp.2195-2198. ⟨10.1016/j.jpcs.2008.03.039⟩. ⟨hal-00560687⟩