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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2011

Importance of intramolecular electron spin relaxation in small molecule semiconductors

Simone Fratini
F. L. Pratt
  • Fonction : Auteur
W. P. Gillin
  • Fonction : Auteur
T. Kreouzis
  • Fonction : Auteur
M. Heeney
  • Fonction : Auteur
N. Stingelin
  • Fonction : Auteur
C. A. Stafford
  • Fonction : Auteur
D. J. Beesley
  • Fonction : Auteur
J. E. Anthony
  • Fonction : Auteur
I. Mckenzie
  • Fonction : Auteur
J.S. Lord
  • Fonction : Auteur
A. J. Drew
  • Fonction : Auteur

Résumé

Electron spin relaxation rate (eSR) is investigated on several organic semiconductors of different morphologies and molecular structures, using avoided level crossing muon spectroscopy as a local spin probe. We find that two functionalized acenes (polycrystalline tri(isopropyl)silyl-pentacene and amorphous 5,6,11,12-tetraphenyltetracene) exhibit eSRs with an Arrhenius-like temperature dependence, each with two characteristic energy scales similar to those expected from vibrations. Polycrystalline tris(8-hydroxyquinolate)gallium shows a similar behavior. The observed eSR for these molecules is no greater than 0.85 MHz at 300 K. The variety of crystal structures and transport regimes that these molecules possess, as well as the local nature of the probe, strongly suggest an intramolecular phenomenon general to many organic semiconductors, in contrast to the commonly assumed spin relaxation models based on intermolecular charge-carrier transport.

Dates et versions

hal-00704588 , version 1 (05-06-2012)

Identifiants

Citer

Simone Fratini, L. Schulz, M. Willis, P. Shusharov, F. L. Pratt, et al.. Importance of intramolecular electron spin relaxation in small molecule semiconductors. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84 (8), pp.085209. ⟨10.1103/PhysRevB.84.085209⟩. ⟨hal-00704588⟩

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