Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies.

Steven Albert (1) , Ana Bengoechea-Encabo (1) , Pierre Lefebvre (1, 2) , Francesca Barbagini (1) , M.A. Sanchez-Garcia (1) , E. Calleja (1) , Uwe Jahn (3) , A. Trampert (3)

1 ETSI Telecomunicacion - Departamento de Ingeniería Electrónica and ISOM
2 L2C - Laboratoire Charles Coulomb
3 PDI - Paul-Drude-Institut für Festkörperelektronik

This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes), to GaN nanocolumns with top semipolar r-planes, and further to GaN nanocolumns with top polar c-planes. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semi-polar and polar nature of the r-planes and c-planes involved. These differences are assessed by photoluminescence measurements at low temperature and correlated to the specific nano-disk geometry.

Mots clés: nanowires; nanocolonnes; nanofils; GaN; InGaN; nanocolumns

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Steven Albert, Ana Bengoechea-Encabo, Pierre Lefebvre, Francesca Barbagini, M.A. Sanchez-Garcia, et al.. Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies.. Applied Physics Letters, 2012, 100, pp.231906. ⟨10.1063/1.4728115⟩. ⟨hal-00704507⟩