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Communication Dans Un Congrès Année : 2009

Improved mathematical model for the investigation of deep traps into semiconductor devices : application to Metamorphic HEMTs

Maissa Jaafar-Belhouji
  • Fonction : Auteur
Christelle Aupetit-Berthelemot
Thomas Cluzeau
DMI
Jean-Pierre Teyssier
  • Fonction : Auteur
  • PersonId : 914307

Résumé

Several parasitic effects that penalize III-V IC and RF transistors performances are directly linked to deep level trapping mechanisms into the structure. The analysis of these phenomena is correlated to the presence of traps signature related to intrinsic and/or process dependent defects. We propose in this paper a survey of a non-linear measurement method namely the isothermal relaxation method used to extract trap signatures. We improve the effectiveness of the mathematical part of the method to obtain more precise results in a more efficient way. An application of our software to Metamorphic HEMTs and a comparison to results obtained with the DLTS method is proposed.
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Dates et versions

hal-00704477 , version 1 (05-06-2012)

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Citer

Maissa Jaafar-Belhouji, Christelle Aupetit-Berthelemot, Thomas Cluzeau, Jean-Pierre Teyssier. Improved mathematical model for the investigation of deep traps into semiconductor devices : application to Metamorphic HEMTs. 74th IEEE-ARFTG Microwave Measurement Symposium, Nov 2009, Broomfield, United States. pp.1-6, ⟨10.1109/ARFTG74.2009.5439099⟩. ⟨hal-00704477⟩

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