Power and thermal design criteria of AlGaN/GaN cascode cell for Wideband distributed power amplifier

Audrey Martin (1) , Tibault Reveyrand (1) , Michel Campovecchio (1) , Raymond Quéré (1) , Olivier Jardel (1) , S. Piotrowicz (2)

1 C2S2
2 III-V Lab - Alcatel-Thalès III-V lab

This paper deals with non-linear modeling of power GaN HEMT and design of power balanced cascode cell for wideband distributed power amplifiers. The active device is a 8times50 mum AlGaN/GaN HEMT grown on SiC substrate. The cascode die is flip-chipped onto an AlN substrate via electrical and mechanical bumps. This GaN-based cascode cell is dedicated to act as the unit power device within a broad-band capacitively-coupled 4-18 GHz distributed amplifier.

Audrey Martin, Tibault Reveyrand, Michel Campovecchio, Raymond Quéré, Olivier Jardel, et al.. Power and thermal design criteria of AlGaN/GaN cascode cell for Wideband distributed power amplifier. International IEEE Workshop "INMMIC" 2008, Nov 2008, Malaga, Spain. pp.145-148, ⟨10.1109/INMMIC.2008.4745738⟩. ⟨hal-00703351⟩