Harmonic Control In Package of Power GaN Transistors for High Efficiency and Wideband Performances in S-Band

Jérôme Chéron (1) , Michel Campovecchio (1) , Denis Barataud (1) , Tibault Reveyrand (1) , M. Stanislawiak , P. Eudeline , D. Floriot , Wilfried Demenitroux (1)

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This paper presents a method for synthesizing the package of power GaN transistors in order to achieve wideband matching at harmonics. The proposed method is applied to optimize the package of a 15W power GaN HEMT for high efficiency performance over 39% bandwidth (S-band). It is demonstrated that the internal pre-matching of package ensures that the impedance seen by the GaN die at the second-harmonic frequency remains confined inside a high-efficiency region over a wide bandwidth whatever loads presented to the output of the package. In fact, when the 2nd-harmonic frequency termination of the package is varied all over the entire Smith Chart, the packaged transistor demonstrates a limited variation of PAE (70±3)% at 3.2GHz. Thereby, this method allows the designer to synthesize the external output matching of the packaged transistor only at the fundamental frequencies without imposing constraints on the 2nd harmonic loads.

Jérôme Chéron, Michel Campovecchio, Denis Barataud, Tibault Reveyrand, M. Stanislawiak, et al.. Harmonic Control In Package of Power GaN Transistors for High Efficiency and Wideband Performances in S-Band. 41st European Microwave Conference, EuMW 2011, Oct 2011, Manshester, United Kingdom. pp.1111-1114. ⟨hal-00701038⟩