Deep silicon etching of 0.8 µm to hundreds of microns wide trenches with the STiGer process

Thomas Tillocher (1) , Wassim Kafrouni (1) , Julien Ladroue (1) , Philippe Lefaucheux (1) , Pierre Ranson (1) , Remi Dussart (1) , Mohamed Boufnichel (2)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés
2 ST-CROLLES - STMicroelectronics [Crolles]

Domaines: Physique des plasmas [physics.plasm-ph]

Thomas Tillocher, Wassim Kafrouni, Julien Ladroue, Philippe Lefaucheux, Pierre Ranson, et al.. Deep silicon etching of 0.8 µm to hundreds of microns wide trenches with the STiGer process. AVS 58th International Symposium & Exhibition, Oct 2011, Nashville, United States. ⟨hal-00696428⟩