A 300 GHz InP/GaAsSb/InP HBT for high data rate applications
Résumé
In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130nm. The emitter width of the transistor is 0.35μm and the base contact is 0.3μm wide. The base and emitter contacts present an excellent contact resistivity. The current gain of the 0.35×5μm2 transistor is equal to 21 and the breakdown voltage is equal to 4V. The current gain cut-off frequency and the unilateral gain cut-off frequency are over 300 GHz and 380 GHz respectively. The transistor is fabricated in an industrial environment at OMMIC foundry.