High field transport of photot-injected electrons in GaAs: Transition from ballistic to drift motion

Pamela Bowlan (1) , Wilhelm Kuehn (1) , Klaus Reimann (1) , Michael. Woerner (1) , Thomas Elsaesser (1) , R. Hey (2) , Christos Flytzanis (3)

1 MBI - Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie
2 PDI - Paul-Drude-Institut für Festkörperelektronik
3 LPA - Laboratoire Pierre Aigrain

Using visible/NIR pump and strong THz probe pulses, we observe the THz field emitted by accelerated photoelectrons in n-type GaAs. A transition from ballistic to drift motion is observed.

Domaines: Autre [cond-mat.other]

Pamela Bowlan, Wilhelm Kuehn, Klaus Reimann, Michael. Woerner, Thomas Elsaesser, et al.. High field transport of photot-injected electrons in GaAs: Transition from ballistic to drift motion. Conference on Lasers and Electro-Optics (CLEO-QELS 2011), May 2011, Baltimore, United States. pp.QMB5. ⟨hal-00670890⟩